Your browser doesn't support javascript.
loading
Normal-Incidence Germanium Photodetectors Integrated with Polymer Microlenses for Optical Fiber Communication Applications.
Liu, Yu-Hsuan; Lin, Chia-Peng; Chen, Po-Wei; Tsao, Chia-Tai; Lin, Chun-Chi; Wu, Tsung-Ting; Wang, Likarn; Na, Neil.
  • Liu YH; Institute of Photonics Technologies, National Tsing Hua University, Hsinchu 30013, Taiwan.
  • Lin CP; Artilux Inc., Hsinchu 30288, Taiwan.
  • Chen PW; Artilux Inc., Hsinchu 30288, Taiwan.
  • Tsao CT; Artilux Inc., Hsinchu 30288, Taiwan.
  • Lin CC; Artilux Inc., Hsinchu 30288, Taiwan.
  • Wu TT; Institute of Photonics Technologies, National Tsing Hua University, Hsinchu 30013, Taiwan.
  • Wang L; Artilux Inc., Hsinchu 30288, Taiwan.
  • Na N; Artilux Inc., Hsinchu 30288, Taiwan.
Sensors (Basel) ; 24(13)2024 Jun 29.
Article en En | MEDLINE | ID: mdl-39001000
ABSTRACT
We present a novel photon-acid diffusion method to integrate polymer microlenses (MLs) on a four-channel, high-speed photo-receiver consisting of normal-incidence germanium (Ge) p-i-n photodiodes (PDs) fabricated on a 200 mm Si substrate. For a 29 µm diameter PD capped with a 54 µm diameter ML, its dark current, responsivity, 3 dB bandwidth (BW), and effective aperture size at -3 V bias and 850 nm wavelength are measured to be 138 nA, 0.6 A/W, 21.4 GHz, and 54 µm, respectively. The enlarged aperture size significantly decouples the tradeoff between aperture size and BW and enhances the optical fiber misalignment tolerance from ±5 µm to ±15 µm to ease the module packaging precision. The sensitivity of the photo-receiver is measured to be -9.2 dBm at 25.78 Gb/s with a bit error rate of 10-12 using non-return-to-zero (NRZ) transmission. Reliability tests are performed, and the results show that the fabricated Ge PDs integrated with polymer MLs pass the GR-468 reliability assurance standard. The demonstrated photo-receiver, a first of its kind to the best of our knowledge, features decent performance, high yield, high throughput, low cost, and compatibility with complementary metal-oxide-semiconductor (CMOS) fabrication processes, and may be further applied to 400 Gb/s pulse-amplitude modulation four-level (PAM4) communication.
Palabras clave