Atomic-Scale Characterization of Dilute Dopants in Topological Insulators via STEM-EDS Using Registration and Cell Averaging Techniques.

Kang, Min-Chul; Islam, Farhan; Yan, Jiaqiang; Vaknin, David; McQueeney, Robert J; Lu, Ping; Zhou, Lin.

Kang MC; Ames National Laboratory, Ames, IA 50011, USA.
Islam F; Ames National Laboratory, Ames, IA 50011, USA.
Yan J; Department of Physics and Astronomy, Iowa State University, Ames, IA 50011, USA.
Vaknin D; Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA.
McQueeney RJ; Ames National Laboratory, Ames, IA 50011, USA.
Lu P; Ames National Laboratory, Ames, IA 50011, USA.
Zhou L; Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA.

Microsc Microanal ; 2024 Aug 28.

Article en En | MEDLINE | ID: mdl-39196820

Palabras clave

aberration-corrected scanning transmission electron microscopy (AC-STEM); atomic-scale EDS mapping; dilute magnet; lattice averaging; non-rigid frame registration

Texto completo: 1 Banco de datos: MEDLINE Idioma: En Año: 2024 Tipo del documento: Article

Texto completo: 1 Banco de datos: MEDLINE Idioma: En Año: 2024 Tipo del documento: Article