Characteristics of nanocomposite ZrO2/Al2O3 films deposited by plasma-enhanced atomic layer deposition.
J Nanosci Nanotechnol
; 7(11): 4180-4, 2007 Nov.
Article
em En
| MEDLINE
| ID: mdl-18047146
ABSTRACT
Nanocomposite ZrO2/Al2O3 (ZAO) films were deposited on Si by plasma-enhanced atomic layer deposition and the film characteristics including interfacial oxide formation, dielectric constant (k), and electrical breakdown strength were investigated without post-annealing process. In both the mixed and nano-laminated ZAO films, the thickness of the interfacial oxide layer (T(IL)) was considerably reduced compared to ZrO2 and Al2O3 films. The T(IL) was 0.8 nm in nano-composite films prepared at a mixing ratio (ZrO2Al2O3) of 11. The breakdown strength and the leakage current level were greatly improved by adding Al2O3 as little as 7.9% compared to that of ZrO2 and were enhanced more with increasing content of Al2O3. The k of ZrO2 and mixed ZAO (Al2O3 7.9%) films were 20.0 and 16.5, respectively. These results indicate that the addition of Al2O3 to ZrO2 greatly improves the electrical properties with less cost of k compared to the addition of SiO2.
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Base de dados:
MEDLINE
Assunto principal:
Zircônio
/
Cristalização
/
Nanotecnologia
/
Nanoestruturas
/
Óxido de Alumínio
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Membranas Artificiais
Idioma:
En
Ano de publicação:
2007
Tipo de documento:
Article