The Co-film-thickness dependent lateral photoeffect in Co-SiO2-Si metal-oxide-semiconductor structures.
Opt Express
; 16(6): 3798-806, 2008 Mar 17.
Article
em En
| MEDLINE
| ID: mdl-18542475
ABSTRACT
We report a transient lateral photoeffect (LPE) in thin metallic Co films deposited on n-type Si substrates with native SiO(2) surfaces. Under the nonuniform irradiation of a laser beam, the lateral phtovoltage (LPV) shows high sensitivity to the laser position in the metal film plane. This effect can be interpreted by the metal-semiconductor (MS) junction formed between metal and semiconductor. The LPV depends significantly on the thickness of Co film. The position sensitivity shows a peak value of 42.6 mV/mm for Co(2.8mn)-SiO(2)-Si and decreases greatly with the increase of the Co film thickness. We explain that by the shorting effect of the metallic film.
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Base de dados:
MEDLINE
Assunto principal:
Fotometria
/
Semicondutores
/
Silício
/
Transdutores
/
Cobalto
/
Dióxido de Silício
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Membranas Artificiais
Idioma:
En
Ano de publicação:
2008
Tipo de documento:
Article