Observation of distinct electron-phonon couplings in gated bilayer graphene.
Phys Rev Lett
; 101(25): 257401, 2008 Dec 19.
Article
em En
| MEDLINE
| ID: mdl-19113750
ABSTRACT
A Raman study of a back gated bilayer graphene sample is presented. The changes in the Fermi level induced by charge transfer splits the Raman G band, hardening its higher component and softening the lower one. These two components are associated with the symmetric (S) and antisymmetric vibration (AS) of the atoms in the two layers, the later one becoming Raman active due to inversion symmetry breaking. The phonon hardening and softening are explained by considering the selective coupling of the S and AS phonons with interband and intraband electron-hole pairs.
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Base de dados:
MEDLINE
Idioma:
En
Ano de publicação:
2008
Tipo de documento:
Article