Preparation of (InGa)As/GaAs multilayered materials for TEM by one side non-rotation ion beam thinning.
J Electron Microsc Tech
; 19(1): 90-8, 1991 Sep.
Article
em En
| MEDLINE
| ID: mdl-1960573
ABSTRACT
A technique is described for the preparation of thin specimens for transmission electron microscopy (TEM) of (InGa)As/GaAs multilayered materials. In this technique, a shielding method is used for selective-area perforation by ion beam thinning. Thin cross-sectional specimen slices are mechanically pre-thinned to about 30 microns and then thinned by ion sputtering from one side of the specimen at a time without rotation of the specimen stage. No direct ion sputtering occurs at the growth surface of the specimen so that a specimen with thin areas containing the desired near-surface structures can be obtained. The recipe for this technique is given in detail. A patterning method for increasing the size of the thin area for TEM investigation is also described. It is shown that a smooth surface can be obtained by sputtering without rotating the stage if obstacles that produce redeposits onto the sputtered surface are removed.
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Base de dados:
MEDLINE
Assunto principal:
Microscopia Eletrônica
/
Técnicas de Preparação Histocitológica
Idioma:
En
Ano de publicação:
1991
Tipo de documento:
Article