A top-down approach to fabrication of high quality vertical heterostructure nanowire arrays.
Nano Lett
; 11(4): 1646-50, 2011 Apr 13.
Article
em En
| MEDLINE
| ID: mdl-21417458
ABSTRACT
We demonstrate a novel top-down approach for fabricating nanowires with unprecedented complexity and optical quality by taking advantage of a nanoscale self-masking effect. We realized vertical arrays of nanowires of 20-40 nm in diameter with 16 segments of complex longitudinal InGaAsP/InP structures. The unprecedented high quality of etched wires is evidenced by the narrowest photoluminescence linewidth ever produced in similar wavelengths, indistinguishable from that of the corresponding wafer. This top-down, mask-free, large scale approach is compatible with the established device fabrication processes and could serve as an important alternative to the bottom-up approach, significantly expanding ranges and varieties of applications of nanowire technology.
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MEDLINE
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Cristalização
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Nanoestruturas
Idioma:
En
Ano de publicação:
2011
Tipo de documento:
Article