Tailoring the electrical conductivity of GaAs by nitrogen incorporation.
J Phys Condens Matter
; 21(17): 174209, 2009 Apr 29.
Article
em En
| MEDLINE
| ID: mdl-21825413
ABSTRACT
We investigate the electrical conductivity of the dilute nitride alloy GaAs(1-x)N(x), focusing on the range of concentrations of N over which this material system behaves as a good conductor. We report a large increase of the resistivity for x>0.2% and a strong reduction of the electron mobility, µ, at xâ¼0.1%. In the ultra-dilute regime (xâ¼0.1%) and at low electric fields (<1 kV cm(-1)), the electrical conductivity retains the characteristic features of electron transport through extended states, albeit with relatively low mobility (µâ¼0.1 m(2) V(-1) s(-1) at T = 293 K) due to scattering of electrons by N atoms. In contrast, at large electric fields (>1 kV cm(-1)), the conduction electrons gain sufficient energy to approach the energy of the resonant N level, where they become spatially localized. This resonant electron localization in an electric field (RELIEF) leads to negative differential velocity. The RELIEF effect could be observed in other III-N-V compounds, such as InAs(1-x)N(x) and InP(1-x)N(x), and has potential for applications in terahertz electronics.
Texto completo:
1
Base de dados:
MEDLINE
Idioma:
En
Ano de publicação:
2009
Tipo de documento:
Article