p-n homo-junction arrays of aligned single walled carbon nanotubes fabricated by selective patterning of polyethyleneimine film.
Nanotechnology
; 22(38): 385302, 2011 Sep 23.
Article
em En
| MEDLINE
| ID: mdl-21865628
ABSTRACT
We describe the fabrication and electrical performance of p-n homo-junction diode arrays of horizontally aligned single walled carbon nanotubes (SWCNTs). Horizontally aligned SWCNTs grown on stable temperature-cut quartz with a density of â¼ 6 SWCNTs µm(-1) were transferred onto a SiO(2)/Si substrate. After the electrical breakdown, aligned SWCNT field effect transistors (FETs) showed unipolar p-type characteristics with a large current on/off ratio of 10(6) at 1 V and a hole mobility per tube of 1500 cm(2) V(-1) s(-1). Spin-coating of polyethyleneimine (PEI) onto p-type SWCNT FETs showed the n-type transfer characteristics. Patterning of spin-coated PEI film enabled the fabrication of p-n homo-junction arrays of aligned SWCNTs in an easy way, where the rectifying behavior was observed with a rectification ratio of â¼ 10(4) at ± 2 V. A comparative study with a p-n homo-junction of random networks of SWCNTs confirmed the advantage of aligned SWCNTs for applications in high performance electronic devices.
Texto completo:
1
Base de dados:
MEDLINE
Assunto principal:
Polietilenoimina
/
Transistores Eletrônicos
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Nanotecnologia
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Nanotubos de Carbono
Idioma:
En
Ano de publicação:
2011
Tipo de documento:
Article