Nature of electronic states in atomically thin MoS2 field-effect transistors.
ACS Nano
; 5(10): 7707-12, 2011 Oct 25.
Article
em En
| MEDLINE
| ID: mdl-21902203
ABSTRACT
We present low-temperature electrical transport experiments in five field-effect transistor devices consisting of monolayer, bilayer, and trilayer MoS(2) films, mechanically exfoliated onto Si/SiO(2) substrate. Our experiments reveal that the electronic states in all films are localized well up to room temperature over the experimentally accessible range of gate voltage. This manifests in two-dimensional (2D) variable range hopping (VRH) at high temperatures, while below â¼30 K, the conductivity displays oscillatory structures in gate voltage arising from resonant tunneling at the localized sites. From the correlation energy (T(0)) of VRH and gate voltage dependence of conductivity, we suggest that Coulomb potential from trapped charges in the substrate is the dominant source of disorder in MoS(2) field-effect devices, which leads to carrier localization, as well.
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MEDLINE
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En
Ano de publicação:
2011
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Article