Electronic versus lattice match for metal-semiconductor epitaxial growth: Pb on Ge(111).
Phys Rev Lett
; 107(6): 066802, 2011 Aug 05.
Article
em En
| MEDLINE
| ID: mdl-21902356
ABSTRACT
Lattice match is important for epitaxial growth. We show that a competing mechanism, electronic match, can dominate at small film thicknesses for metal-semiconductor systems, where quantum confinement and symmetry requirements may favor a different growth pattern. For Pb(111) on Ge(111), an accidental lattice match leads to a â3 × â3 configuration involving a 30° in-plane rotation at large film thicknesses, but it gives way to an incommensurate (1 × 1) configuration at small film thickness. The transformation follows an approximately inverse-film-thickness dependence with superimposed bilayer oscillations.
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Base de dados:
MEDLINE
Idioma:
En
Ano de publicação:
2011
Tipo de documento:
Article