Delayed crystallization of ultrathin Gd2O3 layers on Si(111) observed by in situ X-ray diffraction.
Nanoscale Res Lett
; 7(1): 203, 2012 Mar 29.
Article
em En
| MEDLINE
| ID: mdl-22458962
ABSTRACT
We studied the early stages of Gd2O3 epitaxy on Si(111) in real time by synchrotron-based, high-resolution X-ray diffraction and by reflection high-energy electron diffraction. A comparison between model calculations and the measured X-ray scattering, and the change of reflection high-energy electron diffraction patterns both indicate that the growth begins without forming a three-dimensional crystalline film. The cubic bixbyite structure of Gd2O3 appears only after a few monolayers of deposition.
Texto completo:
1
Base de dados:
MEDLINE
Idioma:
En
Ano de publicação:
2012
Tipo de documento:
Article