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Engineering correlation effects via artificially designed oxide superlattices.
Chen, Hanghui; Millis, Andrew J; Marianetti, Chris A.
Afiliação
  • Chen H; Department of Physics, Columbia University, New York, New York 10027, USA and Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027, USA.
Phys Rev Lett ; 111(11): 116403, 2013 Sep 13.
Article em En | MEDLINE | ID: mdl-24074110
ABSTRACT
Ab initio calculations are used to predict that a superlattice composed of layers of LaTiO3 and LaNiO3 alternating along the [001] direction is a S=1 Mott insulator with large magnetic moments on the Ni sites, negligible moments on the Ti sites and a charge transfer gap set by the energy difference between Ni d and Ti d states, distinct from conventional Mott insulators. Correlation effects are enhanced on the Ni sites via filling the oxygen p states and reducing the Ni-O-Ni bond angle. Small hole (electron) doping of the superlattice leads to a two-dimensional single-band situation with holes (electrons) residing on the Ni d(x2-y2) (Ti d(xy)) orbital and coupled to antiferromagnetically correlated spins in the NiO2 layer.
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Base de dados: MEDLINE Idioma: En Ano de publicação: 2013 Tipo de documento: Article
Buscar no Google
Base de dados: MEDLINE Idioma: En Ano de publicação: 2013 Tipo de documento: Article