Interface thermodynamic state-induced high-performance memristors.

ABSTRACT

A new class of memristors based on long-range-ordered CeO2 nanocubes with a controlled degree of self-assembly is presented, in which the regularity and range of the nanocubes can be greatly improved with a highly concentrated dispersed surfactant. The magnitudes of the hydrophobicity and surface energy components as functions of surfactant concentration were also investigated. The self-assembled nanostructure was found to demonstrate excellent degradation in device threshold voltage with excellent uniformity in resistive switching parameters, particularly a set voltage distribution of ∼ 0.2 V over 30 successive cycles and a fast response time for writing (0.2 µs) and erasing (1 µs) operations, thus offering great potential for nonvolatile memory applications with high performance at low cost.