Nanocrystalline ZnON; high mobility and low band gap semiconductor material for high performance switch transistor and image sensor application.

Lee, Eunha; Benayad, Anass; Shin, Taeho; Lee, HyungIk; Ko, Dong-Su; Kim, Tae Sang; Son, Kyoung Seok; Ryu, Myungkwan; Jeon, Sanghun; Park, Gyeong-Su.

Afiliação

Lee E; Analytical Science Group, Samsung Advanced Institute of Technology, Samsung Electronics Corporations, Yongin-Si, Gyeonggi-Do, 446-712, Korea.
Benayad A; Analytical Science Group, Samsung Advanced Institute of Technology, Samsung Electronics Corporations, Yongin-Si, Gyeonggi-Do, 446-712, Korea.
Shin T; Analytical Science Group, Samsung Advanced Institute of Technology, Samsung Electronics Corporations, Yongin-Si, Gyeonggi-Do, 446-712, Korea.
Lee H; Analytical Science Group, Samsung Advanced Institute of Technology, Samsung Electronics Corporations, Yongin-Si, Gyeonggi-Do, 446-712, Korea.
Ko DS; Analytical Science Group, Samsung Advanced Institute of Technology, Samsung Electronics Corporations, Yongin-Si, Gyeonggi-Do, 446-712, Korea.
Kim TS; Display Lab, Samsung Advanced Institute of Technology, Samsung Electronics Corporations, Yongin-Si, Gyeonggi-Do, 446-712, Korea.
Son KS; Display Lab, Samsung Advanced Institute of Technology, Samsung Electronics Corporations, Yongin-Si, Gyeonggi-Do, 446-712, Korea.
Ryu M; Display Lab, Samsung Advanced Institute of Technology, Samsung Electronics Corporations, Yongin-Si, Gyeonggi-Do, 446-712, Korea.
Jeon S; Department of Applied Physics, Korea University, Sejongro Sejong, 339-700, Korea.
Park GS; Analytical Science Group, Samsung Advanced Institute of Technology, Samsung Electronics Corporations, Yongin-Si, Gyeonggi-Do, 446-712, Korea.

Sci Rep ; 4: 4948, 2014 May 13.

Article em En | MEDLINE | ID: mdl-24824778

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2014 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2014 Tipo de documento: Article