CO2 enhanced chemical vapor deposition growth of few-layer graphene over NiO(x).

Son, In Hyuk; Song, Hyun Jae; Kwon, Soonchul; Bachmatiuk, Alicja; Lee, Seung Jae; Benayad, Anass; Park, Jong Hwan; Choi, Jae-Young; Chang, Hyuk; Rümmeli, Mark H

Son, In Hyuk; Song, Hyun Jae; Kwon, Soonchul; Bachmatiuk, Alicja; Lee, Seung Jae; Benayad, Anass; Park, Jong Hwan; Choi, Jae-Young; Chang, Hyuk; Rümmeli, Mark H.

Afiliação

Son IH; Samsung Advanced Institute of Technology, Samsung Electronics Company, LTD , 130 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do 443-803, Republic of Korea.

ACS Nano ; 8(9): 9224-32, 2014 Sep 23.

Article em En | MEDLINE | ID: mdl-25171048