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Universal size-dependent conductance fluctuations in disordered organic semiconductors.
Massé, A; Coehoorn, R; Bobbert, P A.
Afiliação
  • Massé A; Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, Netherlands.
  • Coehoorn R; Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, Netherlands and Philips Research Laboratories, High Tech Campus 4, 5656 AE Eindhoven, Netherlands.
  • Bobbert PA; Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, Netherlands.
Phys Rev Lett ; 113(11): 116604, 2014 Sep 12.
Article em En | MEDLINE | ID: mdl-25259995
Numerically exact results of hopping charge transport in disordered organic semiconductors show for uncorrelated and dipole-correlated Gaussian energy disorder a universal, power-law, and non-power-law dependence, respectively, of the relative conductance fluctuations on the size of the considered region. Data collapse occurs upon scaling with a characteristic length having a power-law temperature dependence. Below this length, which can be as high as 100 nm for correlated disorder in a realistic case, fluctuations dominate and a continuum description of charge transport breaks down.
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Base de dados: MEDLINE Idioma: En Ano de publicação: 2014 Tipo de documento: Article
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Base de dados: MEDLINE Idioma: En Ano de publicação: 2014 Tipo de documento: Article