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Controlled growth of few-layer hexagonal boron nitride on copper foils using ion beam sputtering deposition.
Wang, Haolin; Zhang, Xingwang; Meng, Junhua; Yin, Zhigang; Liu, Xin; Zhao, Yajuan; Zhang, Liuqi.
Afiliação
  • Wang H; Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China.
Small ; 11(13): 1542-7, 2015 Apr.
Article em En | MEDLINE | ID: mdl-25367702
Ion beam sputtering deposition (IBSD) is used to synthesize high quality few-layer hexagonal boron nitride (h-BN) on copper foils. Compared to the conventional chemical vapor deposition, the IBSD technique avoids the use of unconventional precursors and is much easier to control, which should be very useful for the large-scale production of h-BN in the future.
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2015 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2015 Tipo de documento: Article