Fabrication and characteristics of GaN-based light-emitting diodes with a reduced graphene oxide current-spreading layer.
ACS Appl Mater Interfaces
; 6(24): 22451-6, 2014 Dec 24.
Article
em En
| MEDLINE
| ID: mdl-25411766
ABSTRACT
A reduced graphene oxide (GO) layer was produced on undoped and n-type GaN, and its effect on the current- and heat-spreading properties of GaN-based light-emitting diodes (LEDs) was studied. The reduced GO inserted between metal electrode and GaN semiconductor acted as a conducting layer and enhanced lateral current flow in the device. Especially, introduction of the reduced GO layer on the n-type GaN improved the electrical performance of the device, relative to that of conventional LEDs, due to a decrease in the series resistance of the device. The enhanced current-spreading was further of benefit, giving the device a higher light output power and a lower junction temperature at high injection currents. These results therefore indicate that reduced GO can be a suitable current and heat-spreading layer for GaN-based LEDs.
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MEDLINE
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En
Ano de publicação:
2014
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Article