InAs/Si Hetero-Junction Nanotube Tunnel Transistors.
Sci Rep
; 5: 9843, 2015 Apr 29.
Article
em En
| MEDLINE
| ID: mdl-25923104
ABSTRACT
Hetero-structure tunnel junctions in non-planar gate-all-around nanowire (GAA NW) tunnel FETs (TFETs) have shown significant enhancement in 'ON' state tunnel current over their all-silicon counterpart. Here we show the unique concept of nanotube TFET in a hetero-structure configuration that is capable of much higher drive current as opposed to that of GAA NW TFETs.Through the use of inner/outer core-shell gates, a single III-V hetero-structured nanotube TFET leverages physically larger tunneling area while achieving higher driver current (ION) and saving real estates by eliminating arraying requirement. Numerical simulations has shown that a 10â
nm thin nanotube TFET with a 100â
nm core gate has a 5×normalized output current compared to a 10â
nm diameter GAA NW TFET.
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MEDLINE
Idioma:
En
Ano de publicação:
2015
Tipo de documento:
Article