Inherent photoluminescence Stokes shift in GaAs.
Opt Lett
; 40(11): 2580-3, 2015 Jun 01.
Article
em En
| MEDLINE
| ID: mdl-26030562
ABSTRACT
The intrinsic photoluminescence Stokes shift, i.e., the energy difference between optical band gap and emission peak, of 350 µm thick semi-insulating GaAs wafers is found to be 4 meV at room temperature. The result is based on the determination of the optical bulk band gap from the transmission trend via modified Urbach rule whose result is confirmed with the transmission derivative method. The findings reveal the detailed balance of the optically evoked transitions and disclose the intrinsic link between Stokes shift and the Urbach tail slope parameter.
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MEDLINE
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En
Ano de publicação:
2015
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Article