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Surface-Effect-Induced Optical Bandgap Shrinkage in GaN Nanotubes.
Park, Young S; Lee, Geunsik; Holmes, Mark J; Chan, Christopher C S; Reid, Benjamin P L; Alexander-Webber, Jack A; Nicholas, Robin J; Taylor, Robert A; Kim, Kwang S; Han, Sang W; Yang, Woochul; Jo, Y; Kim, J; Im, Hyunsik.
Afiliação
  • Park YS; †Department of Chemistry and Department of Physics, School of Natural Science, Ulsan National Institute of Science and Technology (UNIST), Ulsan 689-798, Korea.
  • Lee G; †Department of Chemistry and Department of Physics, School of Natural Science, Ulsan National Institute of Science and Technology (UNIST), Ulsan 689-798, Korea.
  • Holmes MJ; ‡Clarendon Laboratory, Department of Physics, University of Oxford, Parks Road, Oxford OX1 3PU, United Kingdom.
  • Chan CC; ‡Clarendon Laboratory, Department of Physics, University of Oxford, Parks Road, Oxford OX1 3PU, United Kingdom.
  • Reid BP; ‡Clarendon Laboratory, Department of Physics, University of Oxford, Parks Road, Oxford OX1 3PU, United Kingdom.
  • Alexander-Webber JA; ‡Clarendon Laboratory, Department of Physics, University of Oxford, Parks Road, Oxford OX1 3PU, United Kingdom.
  • Nicholas RJ; ‡Clarendon Laboratory, Department of Physics, University of Oxford, Parks Road, Oxford OX1 3PU, United Kingdom.
  • Taylor RA; ‡Clarendon Laboratory, Department of Physics, University of Oxford, Parks Road, Oxford OX1 3PU, United Kingdom.
  • Kim KS; †Department of Chemistry and Department of Physics, School of Natural Science, Ulsan National Institute of Science and Technology (UNIST), Ulsan 689-798, Korea.
  • Han SW; §Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science, Pohang 790-784, Korea.
  • Yang W; ∥Department of Physics and Semiconductor Science, Dongguk University, Seoul 100-715, Korea.
  • Jo Y; ∥Department of Physics and Semiconductor Science, Dongguk University, Seoul 100-715, Korea.
  • Kim J; ∥Department of Physics and Semiconductor Science, Dongguk University, Seoul 100-715, Korea.
  • Im H; ∥Department of Physics and Semiconductor Science, Dongguk University, Seoul 100-715, Korea.
Nano Lett ; 15(7): 4472-6, 2015 Jul 08.
Article em En | MEDLINE | ID: mdl-26046390
We investigate nontrivial surface effects on the optical properties of self-assembled crystalline GaN nanotubes grown on Si substrates. The excitonic emission is observed to redshift by ∼100 meV with respect to that of bulk GaN. We find that the conduction band edge is mainly dominated by surface atoms, and that a larger number of surface atoms for the tube is likely to increase the bandwidth, thus reducing the optical bandgap. The experimental findings can have important impacts in the understanding of the role of surfaces in nanostructured semiconductors with an enhanced surface/volume ratio.
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Texto completo: 1 Base de dados: MEDLINE Assunto principal: Nanotubos / Gálio Tipo de estudo: Prognostic_studies Idioma: En Ano de publicação: 2015 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Assunto principal: Nanotubos / Gálio Tipo de estudo: Prognostic_studies Idioma: En Ano de publicação: 2015 Tipo de documento: Article