Facet-Selective Epitaxy of Compound Semiconductors on Faceted Silicon Nanowires.

Mankin, Max N; Day, Robert W; Gao, Ruixuan; No, You-Shin; Kim, Sun-Kyung; McClelland, Arthur A; Bell, David C; Park, Hong-Gyu; Lieber, Charles M

Mankin, Max N; Day, Robert W; Gao, Ruixuan; No, You-Shin; Kim, Sun-Kyung; McClelland, Arthur A; Bell, David C; Park, Hong-Gyu; Lieber, Charles M.

Afiliação

No YS; â¥Department of Physics, Korea University, Seoul 136-701, Republic of Korea.
Park HG; â¥Department of Physics, Korea University, Seoul 136-701, Republic of Korea.

Nano Lett ; 15(7): 4776-82, 2015 Jul 08.

Article em En | MEDLINE | ID: mdl-26057208

Palavras-chave

Si/CdS; Si/InP; aspect ratio trapping; core/shell nanowire; epitaxial growth; facet-selective growth; heterostructure nanowire; selective area epitaxy; selective area growth

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Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2015 Tipo de documento: Article

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Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2015 Tipo de documento: Article