Statistical characteristics of reset switching in Cu/HfO2/Pt resistive switching memory.

Zhang, Meiyun; Long, Shibing; Wang, Guoming; Liu, Ruoyu; Xu, Xiaoxin; Li, Yang; Xu, Dinlin; Liu, Qi; Lv, Hangbing; Miranda, Enrique; Suñé, Jordi; Liu, Ming

Zhang, Meiyun; Long, Shibing; Wang, Guoming; Liu, Ruoyu; Xu, Xiaoxin; Li, Yang; Xu, Dinlin; Liu, Qi; Lv, Hangbing; Miranda, Enrique; Suñé, Jordi; Liu, Ming.

Afiliação

Zhang M; Lab of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China, zhangmeiyun@ime.ac.cn.

Nanoscale Res Lett ; 9(1): 2500, 2014 Dec.

Article em En | MEDLINE | ID: mdl-26089007

Texto completo

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4493841
https://dx.doi.org/10.1186/1556-276X-9-694

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Texto completo: 1 Base de dados: MEDLINE Tipo de estudo: Prognostic_studies Idioma: En Ano de publicação: 2014 Tipo de documento: Article

Texto completo

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4493841
https://dx.doi.org/10.1186/1556-276X-9-694

Imprimir

XML

PubMed Links

Buscar no Google

Texto completo: 1 Base de dados: MEDLINE Tipo de estudo: Prognostic_studies Idioma: En Ano de publicação: 2014 Tipo de documento: Article