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Structural and Chemical Dynamics of Pyridinic-Nitrogen Defects in Graphene.
Lin, Yung-Chang; Teng, Po-Yuan; Yeh, Chao-Hui; Koshino, Masanori; Chiu, Po-Wen; Suenaga, Kazu.
Afiliação
  • Lin YC; National Institute of Advanced Industrial Science and Technology (AIST) , Tsukuba 305-8565, Japan.
  • Teng PY; Department of Electrical Engineering, National Tsing Hua University , Hsinchu 30013, Taiwan.
  • Yeh CH; Department of Electrical Engineering, National Tsing Hua University , Hsinchu 30013, Taiwan.
  • Koshino M; National Institute of Advanced Industrial Science and Technology (AIST) , Tsukuba 305-8565, Japan.
  • Chiu PW; Department of Electrical Engineering, National Tsing Hua University , Hsinchu 30013, Taiwan.
  • Suenaga K; National Institute of Advanced Industrial Science and Technology (AIST) , Tsukuba 305-8565, Japan.
Nano Lett ; 15(11): 7408-13, 2015 Nov 11.
Article em En | MEDLINE | ID: mdl-26488153
High density and controllable nitrogen doping in graphene is a critical issue to realize high performance graphene-based devices. In this paper, we demonstrate an efficient method to selectively produce graphitic-N and pyridinic-N defects in graphene by using the mixture plasma of ozone and nitrogen. The atomic structure, electronic structure, and dynamic behavior of these nitrogen defects are systematically studied at the atomic level by using a scanning transmission electron microscopy. The pyridinic-N exhibits higher chemical activity and tends to trap a series of transition metal atoms (Mg, Al, Ca, Ti, Cr, Mn, and Fe) as individual atoms.
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2015 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2015 Tipo de documento: Article