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Effects of Interface Layers and Domain Walls on the Ferroelectric-Resistive Switching Behavior of Au/BiFeO3/La0.6Sr0.4MnO3 Heterostructures.
Feng, Lei; Yang, Shengwei; Lin, Yue; Zhang, Dalong; Huang, Weichuan; Zhao, Wenbo; Yin, Yuewei; Dong, Sining; Li, Xiaoguang.
Afiliação
  • Feng L; Hefei National Laboratory for Physical Sciences at Microscale, Department of Physics, University of Science and Technology of China , Hefei 230026, P. R. China.
  • Yang S; Hefei National Laboratory for Physical Sciences at Microscale, Department of Physics, University of Science and Technology of China , Hefei 230026, P. R. China.
  • Lin Y; Hefei National Laboratory for Physical Sciences at Microscale, Department of Physics, University of Science and Technology of China , Hefei 230026, P. R. China.
  • Zhang D; Hefei National Laboratory for Physical Sciences at Microscale, Department of Physics, University of Science and Technology of China , Hefei 230026, P. R. China.
  • Huang W; Hefei National Laboratory for Physical Sciences at Microscale, Department of Physics, University of Science and Technology of China , Hefei 230026, P. R. China.
  • Zhao W; Hefei National Laboratory for Physical Sciences at Microscale, Department of Physics, University of Science and Technology of China , Hefei 230026, P. R. China.
  • Yin Y; Hefei National Laboratory for Physical Sciences at Microscale, Department of Physics, University of Science and Technology of China , Hefei 230026, P. R. China.
  • Dong S; Hefei National Laboratory for Physical Sciences at Microscale, Department of Physics, University of Science and Technology of China , Hefei 230026, P. R. China.
  • Li X; Hefei National Laboratory for Physical Sciences at Microscale, Department of Physics, University of Science and Technology of China , Hefei 230026, P. R. China.
ACS Appl Mater Interfaces ; 7(47): 26036-42, 2015 Dec 02.
Article em En | MEDLINE | ID: mdl-26554671
ABSTRACT
The electric field effects on the electric and magnetic properties in multiferroic heterostructures are important for not only understanding the mechanisms of certain novel physical phenomena occurring at heterointerfaces but also offering a route for promising spintronic applications. Using the Au/BiFeO3/La0.6Sr0.4MnO3 (Au/BFO/LSMO) multiferroic heterostructure as a model system, we investigated the ferroelectric-resistive switching (RS) behaviors of the heterostructure. Via the manipulation of the BFO ferroelectric polarizations, the nonvolatile tristate of RS is observed, which is closely related to the Au/BFO and BFO/LSMO interface layers and the highly conducting BFO domain walls (DWs). More interestingly, according to the magnetic field dependence of the RS behavior, the negative magnetoresistance effect of the third resistance state, corresponding to the abnormal current peak in current-pulse voltage hysteresis near the electric coercive field, is also observed at room temperature, which mainly arises from the possible oxygen vacancy accumulation and Fe ion valence variation in the DWs.
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2015 Tipo de documento: Article
Texto completo
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PubMed Links
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2015 Tipo de documento: Article