Enhanced Light Emission due to Formation of Semi-polar InGaN/GaN Multi-quantum Wells.

Zhao, Wan-Ru; Weng, Guo-En; Wang, Jian-Yu; Zhang, Jiang-Yong; Liang, Hong-Wei; Sekiguchi, Takashi; Zhang, Bao-Ping.

Afiliação

Zhao WR; Department of Electronic Engineering, Xiamen University, Xiamen, 361005, People's Republic of China.
Weng GE; Department of Physics, Xiamen University, Xiamen, 361005, People's Republic of China.
Wang JY; School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, People's Republic of China.
Zhang JY; Department of Electronic Engineering, Xiamen University, Xiamen, 361005, People's Republic of China.
Liang HW; School of Physics and Optoelectronic Engineering, Dalian University of Technology, Dalian, 116024, People's Republic of China. hwliang@dlut.edu.cn.
Sekiguchi T; World Premier International (WPI) Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, Ibaraki, 305-0044, Japan.
Zhang BP; Department of Electronic Engineering, Xiamen University, Xiamen, 361005, People's Republic of China. bzhang@xmu.edu.cn.

Nanoscale Res Lett ; 10(1): 459, 2015 Dec.

Article em En | MEDLINE | ID: mdl-26625883