Study of the microstructure information of GaAs epilayers grown on silicon substrate using synchrotron radiation.

Kumar, Ravi; Dixit, V K; Sinha, A K; Ganguli, Tapas; Mukherjee, C; Oak, S M; Sharma, T K.

Afiliação

Kumar R; Semiconductor Physics and Devices Laboratory, Raja Ramanna Centre for Advanced Technology, Indore 452 013, India.
Dixit VK; Semiconductor Physics and Devices Laboratory, Raja Ramanna Centre for Advanced Technology, Indore 452 013, India.
Sinha AK; Indus Synchrotron Utilization Division, Raja Ramanna Centre for Advanced Technology, Indore 452 013, India.
Ganguli T; Indus Synchrotron Utilization Division, Raja Ramanna Centre for Advanced Technology, Indore 452 013, India.
Mukherjee C; Mechanical and Optical Support Section, Raja Ramanna Centre for Advanced Technology, Indore 452 013, India.
Oak SM; Semiconductor Physics and Devices Laboratory, Raja Ramanna Centre for Advanced Technology, Indore 452 013, India.
Sharma TK; Semiconductor Physics and Devices Laboratory, Raja Ramanna Centre for Advanced Technology, Indore 452 013, India.

J Synchrotron Radiat ; 23(1): 238-43, 2016 Jan.

Article em En | MEDLINE | ID: mdl-26698069