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Surface passivation of semiconducting oxides by self-assembled nanoparticles.
Park, Dae-Sung; Wang, Haiyuan; Vasheghani Farahani, Sepehr K; Walker, Marc; Bhatnagar, Akash; Seghier, Djelloul; Choi, Chel-Jong; Kang, Jie-Hun; McConville, Chris F.
Afiliação
  • Park DS; Department of Physics, University of Warwick, Coventry, CV4 7AL, United Kingdom.
  • Wang H; Department of Physics, University of Warwick, Coventry, CV4 7AL, United Kingdom.
  • Vasheghani Farahani SK; Department of Physics, University of Warwick, Coventry, CV4 7AL, United Kingdom.
  • Walker M; Department of Physics, University of Warwick, Coventry, CV4 7AL, United Kingdom.
  • Bhatnagar A; Department of Physics, University of Warwick, Coventry, CV4 7AL, United Kingdom.
  • Seghier D; Science Institute, University of Iceland, Dunhaga 3, Reykjavik, IS-107, Iceland.
  • Choi CJ; School of Semiconductor and Chemical Engineering, Chonbuk National University, Jeonju, 561-756, Republic of Korea.
  • Kang JH; Department of Physics, University of Warwick, Coventry, CV4 7AL, United Kingdom.
  • McConville CF; Department of Nano and Electronic Physics, Kookmin University, Seoul, 136-702, Republic of Korea.
Sci Rep ; 6: 18449, 2016 Jan 13.
Article em En | MEDLINE | ID: mdl-26757827
ABSTRACT
Physiochemical interactions which occur at the surfaces of oxide materials can significantly impair their performance in many device applications. As a result, surface passivation of oxide materials has been attempted via several deposition methods and with a number of different inert materials. Here, we demonstrate a novel approach to passivate the surface of a versatile semiconducting oxide, zinc oxide (ZnO), evoking a self-assembly methodology. This is achieved via thermodynamic phase transformation, to passivate the surface of ZnO thin films with BeO nanoparticles. Our unique approach involves the use of Be(x)Zn(1-x)O (BZO) alloy as a starting material that ultimately yields the required coverage of secondary phase BeO nanoparticles, and prevents thermally-induced lattice dissociation and defect-mediated chemisorption, which are undesirable features observed at the surface of undoped ZnO. This approach to surface passivation will allow the use of semiconducting oxides in a variety of different electronic applications, while maintaining the inherent properties of the materials.

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2016 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2016 Tipo de documento: Article