Synthesis and characterization of P δ-layer in SiO2 by monolayer doping.
Nanotechnology
; 27(7): 075606, 2016 Feb 19.
Article
em En
| MEDLINE
| ID: mdl-26789694
ABSTRACT
Achieving the required control of dopant distribution and selectivity for nanostructured semiconducting building block is a key issue for a large variety of applications. A promising strategy is monolayer doping (MLD), which consists in the creation of a well-ordered monolayer of dopant-containing molecules bonded to the surface of the substrate. In this work, we synthesize a P δ-layer embedded in a SiO2 matrix by MLD. Using a multi-technique approach based on time of flight secondary ion mass spectrometry (ToF-SIMS) and Rutherford backscattering spectrometry (RBS) analyses, we characterize the tuning of P dose as a function of the processing time and temperature. We found the proper conditions for a full grafting of the molecules, reaching a maximal dose of 8.3 × 10(14) atoms/cm(2). Moreover, using 1D rate equation model, we model P diffusion in SiO2 after annealing and we extract a P diffusivity in SiO2 of 1.5 × 10(17) cm(2) s(-1).
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MEDLINE
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En
Ano de publicação:
2016
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Article