Low-Frequency Interlayer Raman Modes to Probe Interface of Twisted Bilayer MoS2.

Huang, Shengxi; Liang, Liangbo; Ling, Xi; Puretzky, Alexander A; Geohegan, David B; Sumpter, Bobby G; Kong, Jing; Meunier, Vincent; Dresselhaus, Mildred S

Huang, Shengxi; Liang, Liangbo; Ling, Xi; Puretzky, Alexander A; Geohegan, David B; Sumpter, Bobby G; Kong, Jing; Meunier, Vincent; Dresselhaus, Mildred S.

Afiliação

Huang S; Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology , Cambridge, Massachusetts 02139, United States.
Liang L; Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute , Troy, New York 12180, United States.
Ling X; Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology , Cambridge, Massachusetts 02139, United States.
Kong J; Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology , Cambridge, Massachusetts 02139, United States.
Meunier V; Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute , Troy, New York 12180, United States.
Dresselhaus MS; Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology , Cambridge, Massachusetts 02139, United States.

Nano Lett ; 16(2): 1435-44, 2016 Feb 10.

Article em En | MEDLINE | ID: mdl-26797083

Palavras-chave

Molybdenum disulfide; density functional theory; interlayer coupling; interlayer phonon modes; low-frequency Raman spectroscopy; twisted bilayer

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Texto completo: 1 Base de dados: MEDLINE Tipo de estudo: Prognostic_studies Idioma: En Ano de publicação: 2016 Tipo de documento: Article

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Texto completo: 1 Base de dados: MEDLINE Tipo de estudo: Prognostic_studies Idioma: En Ano de publicação: 2016 Tipo de documento: Article