Scattering strength of the scatterer inducing variability in graphene on silicon oxide.

ABSTRACT

Large variability of carrier mobility of graphene-based field effect transistors hampers graphene science and technology. We show that the number of the scatterer responsible for the observed variability on graphene devices on silicon oxide can be determined by finding the number of hydrogen that can be chemisorbed on graphene. We use the relationship between the number of the scatterer and the mobility of graphene devices to determine that the variability-inducing scatterer possesses scattering strength 10 times smaller than that of adsorbed potassium atoms and 50 times smaller than that of ion-beam induced vacancies. Our results provide an important, quantitative input towards determining the origin of the variability.