Your browser doesn't support javascript.
loading
Physically Transient Resistive Switching Memory Based on Silk Protein.
Wang, Hong; Zhu, Bowen; Ma, Xiaohua; Hao, Yue; Chen, Xiaodong.
Afiliação
  • Wang H; School of Advanced Materials and Nanotechnology, Key Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an, 710071, China.
  • Zhu B; School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798.
  • Ma X; School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798.
  • Hao Y; School of Advanced Materials and Nanotechnology, Key Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an, 710071, China.
  • Chen X; School of Advanced Materials and Nanotechnology, Key Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an, 710071, China.
Small ; 12(20): 2715-9, 2016 May.
Article em En | MEDLINE | ID: mdl-27028213
Assuntos
Palavras-chave
Texto completo
Imprimir
XML
PubMed Links
Buscar no Google

Texto completo: 1 Base de dados: MEDLINE Assunto principal: Nanotecnologia / Seda / Eletrônica Idioma: En Ano de publicação: 2016 Tipo de documento: Article
Texto completo
Imprimir
XML
PubMed Links
Buscar no Google

Texto completo: 1 Base de dados: MEDLINE Assunto principal: Nanotecnologia / Seda / Eletrônica Idioma: En Ano de publicação: 2016 Tipo de documento: Article