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Highly selective and sensitive phosphate anion sensors based on AlGaN/GaN high electron mobility transistors functionalized by ion imprinted polymer.
Jia, Xiuling; Chen, Dunjun; Bin, Liu; Lu, Hai; Zhang, Rong; Zheng, Youdou.
Afiliação
  • Jia X; Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, P. R. China.
  • Chen D; Chuzhou Vocational and Technical College, Chuzhou 239000, P. R. China.
  • Bin L; Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, P. R. China.
  • Lu H; Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, P. R. China.
  • Zhang R; Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, P. R. China.
  • Zheng Y; Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, P. R. China.
Sci Rep ; 6: 27728, 2016 06 09.
Article em En | MEDLINE | ID: mdl-27278795
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Texto completo: 1 Base de dados: MEDLINE Tipo de estudo: Diagnostic_studies Idioma: En Ano de publicação: 2016 Tipo de documento: Article
Texto completo
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XML
PubMed Links
Buscar no Google

Texto completo: 1 Base de dados: MEDLINE Tipo de estudo: Diagnostic_studies Idioma: En Ano de publicação: 2016 Tipo de documento: Article