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Synthesis, Crystal Structure, Theoretical, and Resistivity Study of BaUSe3.
Prakash, Jai; Tarasenko, Maria S; Mesbah, Adel; Lebègue, Sébastien; Malliakas, Christos D; Ibers, James A.
Afiliação
  • Prakash J; Department of Chemistry, Northwestern University , 2145 Sheridan Road, Evanston, IL 60208-3113, United States.
  • Tarasenko MS; Department of Chemistry, Northwestern University , 2145 Sheridan Road, Evanston, IL 60208-3113, United States.
  • Mesbah A; Department of Chemistry, Northwestern University , 2145 Sheridan Road, Evanston, IL 60208-3113, United States.
  • Lebègue S; ICSM, UMR 5257 CEA/CNRS/UM2/ENSCM , Site de Marcoule - Bât. 426, BP 17171, 30207 Bagnols-sur-Cèze cedex, France.
  • Malliakas CD; Laboratoire de Cristallographie, Résonance Magnétique et Modélisations (CRM2, UMR CNRS 7036), Institut Jean Barriol, Université de Lorraine , BP 239, Boulevard des Aiguillettes, 54506 Vandoeuvre-lès-Nancy, France.
  • Ibers JA; Department of Chemistry, Northwestern University , 2145 Sheridan Road, Evanston, IL 60208-3113, United States.
Inorg Chem ; 55(15): 7734-8, 2016 Aug 01.
Article em En | MEDLINE | ID: mdl-27399160
ABSTRACT
The black-colored compound BaUSe3 has been synthesized at 1173 K by a stoichiometric reaction of the elements in a CsCl flux. BaUSe3 crystallizes in the GdFeO3 structure type. There is no change in structure between 100 and 298 K. The U atoms in this structure are octahedrally connected to six Se atoms. Each octahedral unit shares all six corners with neighboring octahedra, forming a three-dimensional network. BaUSe3 can be charge balanced as Ba(2+)U(4+)(Se(2-))3. DFT electronic structure calculations found BaUSe3 to be antiferromagnetic in its ground state and to be a semiconductor with a band gap of 2.5 eV. The band gap is inconsistent with the black color of the material and with the small activation energy of 0.12(1) eV obtained from resistivity measurements. A UV-vis spectrum indicated that there was no band gap above 1 eV. It is possible that, for BaUSe3, intrinsic and extrinsic impurities from the flux create midgap states that lead to the experimentally measured narrow optical gap. More likely, BaUSe3 presents a challenge to DFT calculations as applied to 5f materials.

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2016 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2016 Tipo de documento: Article