Uncovering edge states and electrical inhomogeneity in MoS2 field-effect transistors.

Wu, Di; Li, Xiao; Luan, Lan; Wu, Xiaoyu; Li, Wei; Yogeesh, Maruthi N; Ghosh, Rudresh; Chu, Zhaodong; Akinwande, Deji; Niu, Qian; Lai, Keji.

Afiliação

Wu D; Department of Physics, University of Texas at Austin, Austin, TX 78712;
Li X; Department of Physics, University of Texas at Austin, Austin, TX 78712;
Luan L; Department of Physics, University of Texas at Austin, Austin, TX 78712;
Wu X; Department of Physics, University of Texas at Austin, Austin, TX 78712;
Li W; Microelectronics Research Center, University of Texas at Austin, Austin, TX 78758.
Yogeesh MN; Microelectronics Research Center, University of Texas at Austin, Austin, TX 78758.
Ghosh R; Microelectronics Research Center, University of Texas at Austin, Austin, TX 78758.
Chu Z; Department of Physics, University of Texas at Austin, Austin, TX 78712;
Akinwande D; Microelectronics Research Center, University of Texas at Austin, Austin, TX 78758.
Niu Q; Department of Physics, University of Texas at Austin, Austin, TX 78712;
Lai K; Department of Physics, University of Texas at Austin, Austin, TX 78712; kejilai@physics.utexas.edu.