Trap Profiling Based on Frequency Varied Charge Pumping Method for Hot Carrier Stressed Thin Gate Oxide Metal Oxide Semiconductors Field Effect Transistors.
J Nanosci Nanotechnol
; 16(5): 4851-5, 2016 May.
Article
em En
| MEDLINE
| ID: mdl-27483833
Buscar no Google
Base de dados:
MEDLINE
Idioma:
En
Ano de publicação:
2016
Tipo de documento:
Article