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Monolithically Integrated Microelectromechanical Systems for On-Chip Strain Engineering of Quantum Dots.
Zhang, Yang; Chen, Yan; Mietschke, Michael; Zhang, Long; Yuan, Feifei; Abel, Stefan; Hühne, Ruben; Nielsch, Kornelius; Fompeyrine, Jean; Ding, Fei; Schmidt, Oliver G.
Afiliação
  • Zhang L; Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences , 110016, Shenyang, China.
  • Yuan F; Institute for Complex Materials, IFW Dresden , Helmholtzstraße 20, 01069 Dresden, Germany.
  • Hühne R; IBM Research GmbH , Säumerstraße 4, 8803 Rüschlikon, Switzerland.
  • Ding F; IBM Research GmbH , Säumerstraße 4, 8803 Rüschlikon, Switzerland.
Nano Lett ; 16(9): 5785-91, 2016 09 14.
Article em En | MEDLINE | ID: mdl-27574953
ABSTRACT
Elastic strain fields based on single crystal piezoelectric elements represent an effective way for engineering the quantum dot (QD) emission with unrivaled precision and technological relevance. However, pioneering researches in this direction were mainly based on bulk piezoelectric substrates, which prevent the development of chip-scale devices. Here, we present a monolithically integrated Microelectromechanical systems (MEMS) device with great potential for on-chip quantum photonic applications. High-quality epitaxial PMN-PT thin films have been grown on SrTiO3 buffered Si and show excellent piezoelectric responses. Dense arrays of MEMS with small footprints are then fabricated based on these films, forming an on-chip strain tuning platform. After transferring the QD-containing nanomembranes onto these MEMS, the nonclassical emissions (e.g., single photons) from single QDs can be engineered by the strain fields. We envision that the strain tunable QD sources on the individually addressable and monolithically integrated MEMS pave the way toward complex quantum photonic applications on chip.
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2016 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2016 Tipo de documento: Article