Ellipsometric characterization of doped Ge0.95Sn0.05 films in the infrared range for plasmonic applications.
Opt Lett
; 41(18): 4398-400, 2016 Sep 15.
Article
em En
| MEDLINE
| ID: mdl-27628407
ABSTRACT
GeSn as a group-IV material opens up new possibilities for realizing photonic device concepts in Si-compatible fabrication processes. Here we present results of the ellipsometric characterization of highly p- and n-type doped Ge0.95Sn0.05 alloys deposited on Si substrates investigated in the wavelength range from 1 to 16 µm. We discuss the suitability of these films for integrated plasmonic applications in the infrared region.
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MEDLINE
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En
Ano de publicação:
2016
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Article