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Photocurrent Switching of Monolayer MoS2 Using a Metal-Insulator Transition.
Lee, Jin Hee; Gul, Hamza Zad; Kim, Hyun; Moon, Byoung Hee; Adhikari, Subash; Kim, Jung Ho; Choi, Homin; Lee, Young Hee; Lim, Seong Chu.
Afiliação
  • Lee JH; Department of Energy Science, Sungkyunkwan University , Suwon 16419, Republic of Korea.
  • Gul HZ; Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS) , Suwon 16419, Republic of Korea.
  • Kim H; Department of Energy Science, Sungkyunkwan University , Suwon 16419, Republic of Korea.
  • Moon BH; Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS) , Suwon 16419, Republic of Korea.
  • Adhikari S; Department of Energy Science, Sungkyunkwan University , Suwon 16419, Republic of Korea.
  • Kim JH; Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS) , Suwon 16419, Republic of Korea.
  • Choi H; Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS) , Suwon 16419, Republic of Korea.
  • Lee YH; Department of Energy Science, Sungkyunkwan University , Suwon 16419, Republic of Korea.
  • Lim SC; Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS) , Suwon 16419, Republic of Korea.
Nano Lett ; 17(2): 673-678, 2017 02 08.
Article em En | MEDLINE | ID: mdl-28029262
We achieve switching on/off the photocurrent of monolayer molybdenum disulfide (MoS2) by controlling the metal-insulator transition (MIT). N-type semiconducting MoS2 under a large negative gate bias generates a photocurrent attributed to the increase of excess carriers in the conduction band by optical excitation. However, under a large positive gate bias, a phase shift from semiconducting to metallic MoS2 is caused, and the photocurrent by excess carriers in the conduction band induced by the laser disappears due to enhanced electron-electron scattering. Thus, no photocurrent is detected in metallic MoS2. Our results indicate that the photocurrent of MoS2 can be switched on/off by appropriately controlling the MIT transition by means of gate bias.
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2017 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2017 Tipo de documento: Article