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Effect of Surface Morphology and Magnetic Impurities on the Electronic Structure in Cobalt-Doped BaFe2As2 Superconductors.
Zou, Qiang; Wu, Zhiming; Fu, Mingming; Zhang, Chunmiao; Rajput, S; Wu, Yaping; Li, Li; Parker, D S; Kang, Junyong; Sefat, A S; Gai, Zheng.
Afiliação
  • Zou Q; Center for Nanophase Materials Sciences, Oak Ridge National Laboratory , Oak Ridge, Tennessee 37831, United States.
  • Wu Z; Center for Nanophase Materials Sciences, Oak Ridge National Laboratory , Oak Ridge, Tennessee 37831, United States.
  • Fu M; Fujian Provincial Key Laboratory of Semiconductors and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University , Xiamen, Fujian Province 361005, P. R. China.
  • Zhang C; Fujian Provincial Key Laboratory of Semiconductors and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University , Xiamen, Fujian Province 361005, P. R. China.
  • Rajput S; Fujian Provincial Key Laboratory of Semiconductors and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University , Xiamen, Fujian Province 361005, P. R. China.
  • Wu Y; Center for Nanophase Materials Sciences, Oak Ridge National Laboratory , Oak Ridge, Tennessee 37831, United States.
  • Li L; Materials Science & Technology Division, Oak Ridge National Laboratory , Oak Ridge, Tennessee 37831, United States.
  • Parker DS; Fujian Provincial Key Laboratory of Semiconductors and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University , Xiamen, Fujian Province 361005, P. R. China.
  • Kang J; Materials Science & Technology Division, Oak Ridge National Laboratory , Oak Ridge, Tennessee 37831, United States.
  • Sefat AS; Materials Science & Technology Division, Oak Ridge National Laboratory , Oak Ridge, Tennessee 37831, United States.
  • Gai Z; Fujian Provincial Key Laboratory of Semiconductors and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University , Xiamen, Fujian Province 361005, P. R. China.
Nano Lett ; 17(3): 1642-1647, 2017 03 08.
Article em En | MEDLINE | ID: mdl-28140593
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Texto completo: 1 Base de dados: MEDLINE Tipo de estudo: Prognostic_studies Idioma: En Ano de publicação: 2017 Tipo de documento: Article
Texto completo
Imprimir
XML
PubMed Links
Buscar no Google

Texto completo: 1 Base de dados: MEDLINE Tipo de estudo: Prognostic_studies Idioma: En Ano de publicação: 2017 Tipo de documento: Article