Thin Al1-x Ga x As0.56Sb0.44 diodes with extremely weak temperature dependence of avalanche breakdown.

Thin Al_1-x Ga _x As_0.56Sb_0.44 diodes with extremely weak temperature dependence of avalanche breakdown.

Zhou, Xinxin; Tan, Chee Hing; Zhang, Shiyong; Moreno, Manuel; Xie, Shiyu; Abdullah, Salman; Ng, Jo Shien.

Afiliação

Zhou X; Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD, UK.
Tan CH; Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD, UK.
Zhang S; Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD, UK.
Moreno M; Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD, UK.
Xie S; Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD, UK.
Abdullah S; Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD, UK.
Ng JS; Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD, UK.

R Soc Open Sci ; 4(5): 170071, 2017 May.

Article em En | MEDLINE | ID: mdl-28573013