Gate-Defined One-Dimensional Channel and Broken Symmetry States in MoS2 van der Waals Heterostructures.
Nano Lett
; 17(8): 5008-5011, 2017 08 09.
Article
em En
| MEDLINE
| ID: mdl-28686030
ABSTRACT
We have realized encapsulated trilayer MoS2 devices with gated graphene contacts. In the bulk, we observe an electron mobility as high as 7000 cm2/(V s) at a density of 3 × 1012 cm-2 at a temperature of 1.9 K. Shubnikov-de Haas oscillations start at magnetic fields as low as 0.9 T. The observed 3-fold Landau level degeneracy can be understood based on the valley Zeeman effect. Negatively biased split gate electrodes allow us to form a channel that can be completely pinched off for sufficiently large gate voltages. The measured conductance displays plateau-like features.
Texto completo:
1
Base de dados:
MEDLINE
Idioma:
En
Ano de publicação:
2017
Tipo de documento:
Article