Crystallinity and Sub-Band Gap Absorption of Femtosecond-Laser Hyperdoped Silicon Formed in Different N-Containing Gas Mixtures.

Sun, Haibin; Xiao, Jiamin; Zhu, Suwan; Hu, Yue; Feng, Guojin; Zhuang, Jun; Zhao, Li.

Afiliação

Sun H; Collaborative Innovation Center of Advanced Microstructures, State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China. sunhaibin007@gmail.com.
Xiao J; Department of Optical Science and Engineering, Fudan University, Shanghai 200433, China. 12110190077@fudan.edu.cn.
Zhu S; Collaborative Innovation Center of Advanced Microstructures, State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China. 14110190075@fudan.edu.cn.
Hu Y; Department of Optical Science and Engineering, Fudan University, Shanghai 200433, China. 14110720002@fudan.edu.cn.
Feng G; Spectrophotometry Laboratory, National Institute of Metrology, Beijing 100013, China. fengguojin@nim.ac.cn.
Zhuang J; Department of Optical Science and Engineering, Fudan University, Shanghai 200433, China. junzhuang@fudan.edu.cn.
Zhao L; Collaborative Innovation Center of Advanced Microstructures, State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China. lizhao@fudan.edu.cn.

Materials (Basel) ; 10(4)2017 Mar 28.

Article em En | MEDLINE | ID: mdl-28772709