Investigation on Surface Polarization of Al<sub>2</sub>O<sub>3</sub>-capped GaN/AlGaN/GaN Heterostructure by Angle-Resolved X-ray Photoelectron Spectroscopy.

Investigation on Surface Polarization of Al₂O₃-capped GaN/AlGaN/GaN Heterostructure by Angle-Resolved X-ray Photoelectron Spectroscopy.

Duan, Tian Li; Pan, Ji Sheng; Wang, Ning; Cheng, Kai; Yu, Hong Yu.

Afiliação

Duan TL; Southern University of Science and Technology, Shenzhen, 518055, People's Republic of China.
Pan JS; Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, Innovis, #08-03, Singapore, 138634, Singapore.
Wang N; Southern University of Science and Technology, Shenzhen, 518055, People's Republic of China.
Cheng K; Enkris Semiconductor, Inc, Suzhou, 215000, People's Republic of China.
Yu HY; Southern University of Science and Technology, Shenzhen, 518055, People's Republic of China. yuhy@sustc.edu.cn.

Nanoscale Res Lett ; 12(1): 499, 2017 Aug 17.

Article em En | MEDLINE | ID: mdl-28815429