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Ultrafast Graphene Light Emitters.
Kim, Young Duck; Gao, Yuanda; Shiue, Ren-Jye; Wang, Lei; Aslan, Burak; Bae, Myung-Ho; Kim, Hyungsik; Seo, Dongjea; Choi, Heon-Jin; Kim, Suk Hyun; Nemilentsau, Andrei; Low, Tony; Tan, Cheng; Efetov, Dmitri K; Taniguchi, Takashi; Watanabe, Kenji; Shepard, Kenneth L; Heinz, Tony F; Englund, Dirk; Hone, James.
Afiliação
  • Kim YD; Department of Physics, Kyung Hee University , Seoul 02447, Republic of Korea.
  • Shiue RJ; Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology , Cambridge, Massachusetts 02139, United States.
  • Wang L; Kavli Institute at Cornell for Nanoscale Science , Ithaca, New York 14853, United States.
  • Aslan B; Department of Applied Physics, Stanford University , Stanford, California 94305, United States.
  • Bae MH; SLAC National Accelerator Laboratory , Menlo Park, California 94025, United States.
  • Kim H; Korea Research Institute of Standards and Science , Daejeon 34113, Republic of Korea.
  • Seo D; Department of Nano Science, University of Science and Technology , Daejeon 34113, Republic of Korea.
  • Kim SH; Department of Materials Science and Engineering, Yonsei University , Seoul 120-749, Republic of Korea.
  • Nemilentsau A; Department of Materials Science and Engineering, Yonsei University , Seoul 120-749, Republic of Korea.
  • Low T; Department of Applied Physics, Stanford University , Stanford, California 94305, United States.
  • Tan C; SLAC National Accelerator Laboratory , Menlo Park, California 94025, United States.
  • Efetov DK; Department of Electrical and Computer Engineering, University of Minnesota , Minneapolis, Minnesota 55455, United States.
  • Taniguchi T; Department of Electrical and Computer Engineering, University of Minnesota , Minneapolis, Minnesota 55455, United States.
  • Shepard KL; Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology , Cambridge, Massachusetts 02139, United States.
  • Heinz TF; ICFO-Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology , 08860 Castelldefels, Barcelona, Spain.
  • Englund D; National Institute for Materials Science , 1-1 Namiki, Tsukuba 305-0044, Japan.
  • Hone J; National Institute for Materials Science , 1-1 Namiki, Tsukuba 305-0044, Japan.
Nano Lett ; 18(2): 934-940, 2018 02 14.
Article em En | MEDLINE | ID: mdl-29337567
ABSTRACT
Ultrafast electrically driven nanoscale light sources are critical components in nanophotonics. Compound semiconductor-based light sources for the nanophotonic platforms have been extensively investigated over the past decades. However, monolithic ultrafast light sources with a small footprint remain a challenge. Here, we demonstrate electrically driven ultrafast graphene light emitters that achieve light pulse generation with up to 10 GHz bandwidth across a broad spectral range from the visible to the near-infrared. The fast response results from ultrafast charge-carrier dynamics in graphene and weak electron-acoustic phonon-mediated coupling between the electronic and lattice degrees of freedom. We also find that encapsulating graphene with hexagonal boron nitride (hBN) layers strongly modifies the emission spectrum by changing the local optical density of states, thus providing up to 460% enhancement compared to the gray-body thermal radiation for a broad peak centered at 720 nm. Furthermore, the hBN encapsulation layers permit stable and bright visible thermal radiation with electronic temperatures up to 2000 K under ambient conditions as well as efficient ultrafast electronic cooling via near-field coupling to hybrid polaritonic modes under electrical excitation. These high-speed graphene light emitters provide a promising path for on-chip light sources for optical communications and other optoelectronic applications.
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2018 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2018 Tipo de documento: Article