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Remarkably High Hole Mobility Metal-Oxide Thin-Film Transistors.
Shih, Cheng Wei; Chin, Albert; Lu, Chun Fu; Su, Wei Fang.
Afiliação
  • Shih CW; Department of Electronics Engineering, National Chiao Tung University, Hsinchu, 300, Taiwan.
  • Chin A; Department of Electronics Engineering, National Chiao Tung University, Hsinchu, 300, Taiwan. achin@faculty.nctu.edu.tw.
  • Lu CF; Depatment of Materials Science & Engineering, National Taiwan University, Taipei, 10617, Taiwan.
  • Su WF; Depatment of Materials Science & Engineering, National Taiwan University, Taipei, 10617, Taiwan.
Sci Rep ; 8(1): 889, 2018 01 17.
Article em En | MEDLINE | ID: mdl-29343726

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2018 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2018 Tipo de documento: Article