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Skin electronics from scalable fabrication of an intrinsically stretchable transistor array.
Wang, Sihong; Xu, Jie; Wang, Weichen; Wang, Ging-Ji Nathan; Rastak, Reza; Molina-Lopez, Francisco; Chung, Jong Won; Niu, Simiao; Feig, Vivian R; Lopez, Jeffery; Lei, Ting; Kwon, Soon-Ki; Kim, Yeongin; Foudeh, Amir M; Ehrlich, Anatol; Gasperini, Andrea; Yun, Youngjun; Murmann, Boris; Tok, Jeffery B-H; Bao, Zhenan.
Afiliação
  • Wang S; Department of Chemical Engineering, Stanford University, Stanford, California 94305, USA.
  • Xu J; Department of Chemical Engineering, Stanford University, Stanford, California 94305, USA.
  • Wang W; Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, USA.
  • Wang GN; Department of Chemical Engineering, Stanford University, Stanford, California 94305, USA.
  • Rastak R; Department of Civil and Environmental Engineering, Stanford University, Stanford, California 94305, USA.
  • Molina-Lopez F; Department of Chemical Engineering, Stanford University, Stanford, California 94305, USA.
  • Chung JW; Department of Chemical Engineering, Stanford University, Stanford, California 94305, USA.
  • Niu S; Samsung Advanced Institute of Technology, Yeongtong-gu, Suwon-si, Gyeonggi-do 443-803, Republic of Korea.
  • Feig VR; Department of Chemical Engineering, Stanford University, Stanford, California 94305, USA.
  • Lopez J; Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, USA.
  • Lei T; Department of Chemical Engineering, Stanford University, Stanford, California 94305, USA.
  • Kwon SK; Department of Chemical Engineering, Stanford University, Stanford, California 94305, USA.
  • Kim Y; Department of Materials Engineering and Convergence Technology and ERI, Gyeongsang National University, Jinju, 660-701, Republic of Korea.
  • Foudeh AM; Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA.
  • Ehrlich A; Department of Chemical Engineering, Stanford University, Stanford, California 94305, USA.
  • Gasperini A; Department of Chemical Engineering, Stanford University, Stanford, California 94305, USA.
  • Yun Y; Department of Chemical Engineering, Stanford University, Stanford, California 94305, USA.
  • Murmann B; Department of Chemical Engineering, Stanford University, Stanford, California 94305, USA.
  • Tok JB; Samsung Advanced Institute of Technology, Yeongtong-gu, Suwon-si, Gyeonggi-do 443-803, Republic of Korea.
  • Bao Z; Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA.
Nature ; 555(7694): 83-88, 2018 03 01.
Article em En | MEDLINE | ID: mdl-29466334
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Texto completo: 1 Base de dados: MEDLINE Assunto principal: Pele / Transistores Eletrônicos / Maleabilidade / Eletrônica / Dispositivos Eletrônicos Vestíveis Limite: Humans Idioma: En Ano de publicação: 2018 Tipo de documento: Article
Texto completo
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Buscar no Google

Texto completo: 1 Base de dados: MEDLINE Assunto principal: Pele / Transistores Eletrônicos / Maleabilidade / Eletrônica / Dispositivos Eletrônicos Vestíveis Limite: Humans Idioma: En Ano de publicação: 2018 Tipo de documento: Article