High Electron Mobility and Insights into Temperature-Dependent Scattering Mechanisms in InAsSb Nanowires.

Boland, Jessica L; Amaduzzi, Francesca; Sterzl, Sabrina; Potts, Heidi; Herz, Laura M; Fontcuberta I Morral, Anna; Johnston, Michael B.

Afiliação

Boland JL; Department of Physics , University of Oxford, Clarendon Laboratory , Parks Road , Oxford OX1 3PU , United Kingdom.
Amaduzzi F; Laboratory of Semiconductor Materials , École Polytechnique Fédérale de Lausanne (EPFL) , CH-1015 Lausanne , Switzerland.
Sterzl S; Department of Physics , University of Oxford, Clarendon Laboratory , Parks Road , Oxford OX1 3PU , United Kingdom.
Potts H; Laboratory of Semiconductor Materials , École Polytechnique Fédérale de Lausanne (EPFL) , CH-1015 Lausanne , Switzerland.
Herz LM; Department of Physics , University of Oxford, Clarendon Laboratory , Parks Road , Oxford OX1 3PU , United Kingdom.
Fontcuberta I Morral A; Laboratory of Semiconductor Materials , École Polytechnique Fédérale de Lausanne (EPFL) , CH-1015 Lausanne , Switzerland.
Johnston MB; Department of Physics , University of Oxford, Clarendon Laboratory , Parks Road , Oxford OX1 3PU , United Kingdom.

Nano Lett ; 18(6): 3703-3710, 2018 06 13.

Article em En | MEDLINE | ID: mdl-29717874