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Novel Organic Phototransistor-Based Nonvolatile Memory Integrated with UV-Sensing/Green-Emissive Aggregation Enhanced Emission (AEE)-Active Aromatic Polyamide Electret Layer.
Cheng, Shun-Wen; Han, Ting; Huang, Teng-Yung; Chang Chien, Yu-Hsin; Liu, Cheng-Liang; Tang, Ben Zhong; Liou, Guey-Sheng.
Afiliação
  • Cheng SW; Institute of Polymer Science and Engineering , National Taiwan University , Taipei 10617 , Taiwan.
  • Han T; Department of Chemical and Materials Engineering , Hong Kong University of Science and Technology , Clear Water Bay , Kowloon , Hong Kong, China.
  • Huang TY; Institute of Polymer Science and Engineering , National Taiwan University , Taipei 10617 , Taiwan.
  • Chang Chien YH; Department of Chemical and Materials Engineering , National Central University , Taoyuan 32001 , Taiwan.
  • Liu CL; Department of Chemical and Materials Engineering , National Central University , Taoyuan 32001 , Taiwan.
  • Tang BZ; Department of Chemical and Materials Engineering , Hong Kong University of Science and Technology , Clear Water Bay , Kowloon , Hong Kong, China.
  • Liou GS; Institute of Polymer Science and Engineering , National Taiwan University , Taipei 10617 , Taiwan.
ACS Appl Mater Interfaces ; 10(21): 18281-18288, 2018 May 30.
Article em En | MEDLINE | ID: mdl-29733198
ABSTRACT
A novel aggregation enhanced emission (AEE)-active polyamide TPA-CN-TPE with a high photoluminesence characteristic was successfully synthesized by the direct polymerization of 4-cyanotriphenyl diamine (TPA-CN) and tetraphenylethene (TPE)-containing dicarboxylic acid. The obtained luminescent polyamide plays a significant role as the polymer electret layer in organic field-effect transistors (OFETs)-type memory. The strong green emission of TPA-CN-TPE under ultraviolet (UV) irradiation can be directly absorbed by the pentacene channel, displaying a light-induced programming and voltage-driven erasing organic phototransistor-based nonvolatile memory. Memory window can be effectively manipulated between the programming and erasing states by applying UV light illumination and electrical field, respectively. The photoinduced memory behavior can be maintained for over 104 s between these two states with an on/off ratio of 104, and the memory switching can be steadily operated for many cycles. With high photoresponsivity ( R) and photosensitivity ( S), this organic phototransistor integrated with AEE-active polyamide electret layer could serve as an excellent candidate for UV photodetectors in optical applications. For comparison, an AEE-inactive aromatic polyimide TPA-PIS electret with much weaker solid-state emission was also applied in the same OFETs device architecture, but this device did not show any UV-sensitive and UV-induced memory characteristics, which further confirmed the significance of the light-emitting capability of the electret layer.
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2018 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2018 Tipo de documento: Article